GT20J101 IGBT 600V 20A N-Channel Power Transistor | Toshiba TO-3P

About GT20J101 IGBT 600V 20A N-Channel Power Transistor | Toshiba TO-3P

The GT20J101 is a silicon N-channel IGBT from Toshiba, designed for high-power switching applications. It combines high-voltage switching capability with a compact through-hole package, making it suitable for use in various power electronic circuits.

With a 600V collector-emitter voltage rating and 20A continuous collector current rating, the GT20J101 is suitable for compatible high-power switching applications such as power supplies, inverters and industrial electronic equipment.

The device features an enhancement-mode design and is specified for high-speed switching. The TO-3P(N) package with three terminals provides convenient through-hole mounting for compatible circuit boards and power electronics assemblies.

Key Features

• Toshiba GT20J101 IGBT
• Silicon N-channel IGBT
• 600V collector-emitter voltage
• 20A continuous collector current
• 40A pulsed collector current
• 20V gate-emitter voltage
• 130W collector power dissipation
• High-speed switching design
• 3-pin TO-3P(N) package
• Through-hole mounting
• Suitable for high-power switching applications

Applications

Suitable for compatible SMPS, inverters, power supplies, industrial control equipment, motor-control circuits, switching circuits and other high-power electronic applications.

Important: Always check the original circuit design, voltage/current requirements, gate-drive conditions, thermal requirements and package pin configuration before replacing an IGBT. Use the manufacturer's datasheet for final component selection.