G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package
G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package
G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package
G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package

G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package

MOQ : 1 Piece

G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package Specification

  • Features
  • Low saturation voltage, fast switching, high efficiency
  • Usage
  • IGBT, power electronic switches, high power circuits
  • IP Rating
  • Not Rated
  • Components
  • IGBT (Insulated Gate Bipolar Transistor)
  • Operating Temperature
  • -55C to +150C
  • Output
  • Collector-Emitter (Switched Load)
  • Response Time
  • Switching Times: Turn-on < 200 ns, Turn-off < 400 ns
  • Power Supply
  • N/A (depends on application circuit)
  • Thermal Conductivity
  • RthJC = 0.5C/W (Junction to Case)
  • Input
  • Gate-driven (Voltage/Current controlled as per circuit)
  • Power Source
  • As per application (DC or Switched)
  • Interface
  • Three-pin (Gate, Collector, Emitter)
  • Product Type
  • IGBT Transistor
  • Application
  • Motor Drives, Inverters, Power Supplies, Industrial Controls
  • Rated Voltage
  • 600V
  • Supply Voltage
  • 600V Maximum Collector-Emitter
  • Size
  • TO-220 Package
  • Dimension (L*W*H)
  • Approx. 15.6 10.2 4.5 mm
  • Function
  • High-speed switching power transistor
  • Color
  • Black (body), silver (leads)
  • Weight
  • Approx. 3 g
  • Capacity
  • 20A (Collector Current at 25C)
  • Thickness
  • Standard TO-220 (Typically ~4.5 mm)
  • Current Rating
  • 20A Continuous Collector Current
  • Frequency
  • High-speed switching (Typical for power IGBT ~10 to 30 kHz)
  • Lead Finish
  • Tin plated
  • Maximum Power Dissipation
  • 125W
  • Gate Threshold Voltage (Vge(th))
  • 4V-6V
  • Gate Charge (Qg)
  • Approx. 90nC
  • Collector-Emitter Saturation Voltage (Vce(sat))
  • 2.0V at Ic=20A
  • Mounting Type
  • Through Hole
  • Isolation Voltage
  • Collector to Emitter isolation up to 2kV (typical for package)
  • RoHS Compliant
  • Yes
  • Pin Configuration
  • Pin 1: Gate, Pin 2: Collector, Pin 3: Emitter
  • Package/Case
  • TO-220
  • Category
  • Discrete Semiconductor
  • Safe Operating Area
  • SOA rated for high reliability
 

G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package Trade Information

  • Minimum Order Quantity
  • 1 Piece
  • Payment Terms
  • Cash in Advance (CID)
  • Supply Ability
  • 100 Pieces Per Month
  • Delivery Time
  • 2-5 Days
  • Main Domestic Market
  • All India
 

About G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package



The G20N60 IGBT Transistor stands out as a redoubtable solution, acclaimed for high-speed power switching and exceptional efficiency. Operating at 600V and 20A, this TO-220 packaged ace supports noteworthy thermal performance (RthJC = 0.5C/W) and rapid response times. Its competitive pricing makes it a spotlight choice for motor drives, inverters, and industrial controls. With SOA reliability, robust collector-emitter isolation (2kV), and RoHS compliance, this discrete semiconductor is meticulously designed for demanding, high-frequency power applications in India's dynamic electronics market.

Material Feature & Feature Highlights of G20N60 IGBT Transistor

Crafted with a tin-plated finish and durable black body, the G20N60 IGBT Transistor is built for longevity and optimal conductivity. Equipped with low collector-emitter saturation voltage and high efficiency, it operates seamlessly under high-speed switching conditions (10 to 30 kHz). For proper use, solder the three-pin TO-220 through-hole package (Gate, Collector, Emitter) securely on compatible PCBs, ensuring a robust connection for industrial control and power supply applications.


Sample Policy, Certifications, and Delivery Process for G20N60 IGBT Transistor

Certified RoHS compliant, the G20N60 is meticulously inspected prior to dispatch. Sample requests are processed efficiently, reflecting our customer-oriented policy. Orders are swiftly shipped across India, with real-time order processing and careful packaging to prevent damage during transit. Typical delivery times range from 2 to 7 business days, depending on location and order volume, ensuring expedited receipt and reliable solutions for prototyping or mass production needs.


FAQ's of G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package:


Q: How is the G20N60 IGBT Transistor typically used in industrial applications?

A: The G20N60 IGBT Transistor is primarily used in high-speed power switching circuits such as motor drives, inverters, and industrial control systems, where stable and efficient switching is essential.

Q: What are the key benefits of choosing the G20N60 IGBT over similar transistors?

A: Noteworthy benefits include its high current capacity (20A), low saturation voltage, fast switching, SOA-rated reliability, and strong insulation (2kV), making it ideal for demanding, high-efficiency applications.

Q: Where can the G20N60 Transistor be installed in a circuit board?

A: Designed for through-hole mounting, the G20N60 Transistor is installed using its TO-220 package, with its three pins-Gate, Collector, Emitter-soldered into designated positions on the PCB.

Q: What certifications does the G20N60 IGBT Transistor hold?

A: The G20N60 is RoHS compliant, ensuring it meets stringent environmental and safety standards for use in modern electronic assemblies.

Q: When will my G20N60 IGBT Transistor order be shipped after processing?

A: Orders are processed promptly and usually shipped within 1-2 business days. Delivery generally takes 2-7 business days, depending on your location within India.

Q: How do I ensure correct direction of use for the G20N60 IGBT?

A: Follow the pin configuration (Pin 1: Gate, Pin 2: Collector, Pin 3: Emitter), adhere to operating limits (600V, 20A), and mount the device securely as per the application's circuit design for optimal performance.

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