G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package

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G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package

Name: G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package
Brand: RADHIKA ELECTRONICS
Price: 85.0 INR
Availability: InStock

Price 85.0 INR/ Piece

Get a Price/Quote

MOQ : 10 Pieces

G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package Specification

Input
Gate-driven (Voltage/Current controlled as per circuit)

Components
IGBT (Insulated Gate Bipolar Transistor)

Operating Temperature
-55C to +150C

Usage
IGBT, power electronic switches, high power circuits

IP Rating
Not Rated

Power Supply
N/A (depends on application circuit)

Features
Low saturation voltage, fast switching, high efficiency

Power Source
As per application (DC or Switched)

Output
Collector-Emitter (Switched Load)

Response Time
Switching Times: Turn-on < 200 ns, Turn-off < 400 ns

Interface
Three-pin (Gate, Collector, Emitter)

Thermal Conductivity
RthJC = 0.5C/W (Junction to Case)

Product Type
IGBT Transistor

Application
Motor Drives, Inverters, Power Supplies, Industrial Controls

Rated Voltage
600V

Supply Voltage
600V Maximum Collector-Emitter

Size
TO-220 Package

Dimension (L*W*H)
Approx. 15.6 10.2 4.5 mm

Function
High-speed switching power transistor

Color
Black (body), silver (leads)

Weight
Approx. 3 g

Capacity
20A (Collector Current at 25C)

Thickness
Standard TO-220 (Typically ~4.5 mm)

Current Rating
20A Continuous Collector Current

Frequency
High-speed switching (Typical for power IGBT ~10 to 30 kHz)

Mounting Type
Through Hole

Isolation Voltage
Collector to Emitter isolation up to 2kV (typical for package)

Gate Charge (Qg)
Approx. 90nC

Collector-Emitter Saturation Voltage (Vce(sat))
2.0V at Ic=20A

Category
Discrete Semiconductor

Safe Operating Area
SOA rated for high reliability

Package/Case
TO-220

Pin Configuration
Pin 1: Gate, Pin 2: Collector, Pin 3: Emitter

Lead Finish
Tin plated

RoHS Compliant
Yes

Gate Threshold Voltage (Vge(th))
4V-6V

Maximum Power Dissipation
125W

G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package Trade Information

Minimum Order Quantity
10 Pieces

Payment Terms
Cash in Advance (CID)

Supply Ability
100 Pieces Per Month

Delivery Time
2 Days

Main Domestic Market
All India

About G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package

The G20N60 IGBT Transistor stands out as a redoubtable solution, acclaimed for high-speed power switching and exceptional efficiency. Operating at 600V and 20A, this TO-220 packaged ace supports noteworthy thermal performance (RthJC = 0.5C/W) and rapid response times. Its competitive pricing makes it a spotlight choice for motor drives, inverters, and industrial controls. With SOA reliability, robust collector-emitter isolation (2kV), and RoHS compliance, this discrete semiconductor is meticulously designed for demanding, high-frequency power applications in India's dynamic electronics market.

Material Feature & Feature Highlights of G20N60 IGBT Transistor

Crafted with a tin-plated finish and durable black body, the G20N60 IGBT Transistor is built for longevity and optimal conductivity. Equipped with low collector-emitter saturation voltage and high efficiency, it operates seamlessly under high-speed switching conditions (10 to 30 kHz). For proper use, solder the three-pin TO-220 through-hole package (Gate, Collector, Emitter) securely on compatible PCBs, ensuring a robust connection for industrial control and power supply applications.

Sample Policy, Certifications, and Delivery Process for G20N60 IGBT Transistor

Certified RoHS compliant, the G20N60 is meticulously inspected prior to dispatch. Sample requests are processed efficiently, reflecting our customer-oriented policy. Orders are swiftly shipped across India, with real-time order processing and careful packaging to prevent damage during transit. Typical delivery times range from 2 to 7 business days, depending on location and order volume, ensuring expedited receipt and reliable solutions for prototyping or mass production needs.

FAQ's of G20N60 IGBT Transistor 600V 20A High-Speed Power Switching Transistor TO-220 Package:

Q: How is the G20N60 IGBT Transistor typically used in industrial applications?

A: The G20N60 IGBT Transistor is primarily used in high-speed power switching circuits such as motor drives, inverters, and industrial control systems, where stable and efficient switching is essential.

Q: What are the key benefits of choosing the G20N60 IGBT over similar transistors?

A: Noteworthy benefits include its high current capacity (20A), low saturation voltage, fast switching, SOA-rated reliability, and strong insulation (2kV), making it ideal for demanding, high-efficiency applications.

Q: Where can the G20N60 Transistor be installed in a circuit board?

A: Designed for through-hole mounting, the G20N60 Transistor is installed using its TO-220 package, with its three pins-Gate, Collector, Emitter-soldered into designated positions on the PCB.

Q: What certifications does the G20N60 IGBT Transistor hold?

A: The G20N60 is RoHS compliant, ensuring it meets stringent environmental and safety standards for use in modern electronic assemblies.

Q: When will my G20N60 IGBT Transistor order be shipped after processing?

A: Orders are processed promptly and usually shipped within 1-2 business days. Delivery generally takes 2-7 business days, depending on your location within India.

Q: How do I ensure correct direction of use for the G20N60 IGBT?

A: Follow the pin configuration (Pin 1: Gate, Pin 2: Collector, Pin 3: Emitter), adhere to operating limits (600V, 20A), and mount the device securely as per the application's circuit design for optimal performance.

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