Power Transistor

• Application
• Motor Drives, Inverters, Power Supplies, Industrial Controls

• Capacity
• 20A (Collector Current at 25C) Kg/hr

• Color
• Black (body), silver (leads)

• Components
• IGBT (Insulated Gate Bipolar Transistor)

• Current Rating
• 20A Continuous Collector Current

• Dimension (L*W*H)
• Approx. 15.6 10.2 4.5 mm Millimeter (mm)

• Features
• Low saturation voltage, fast switching, high efficiency

• Frequency
• High-speed switching (Typical for power IGBT ~10 to 30 kHz) Kilohertz ( KHZ )

• Function
• High-speed switching power transistor

• IP Rating
• Not Rated

• Input
• Gate-driven (Voltage/Current controlled as per circuit)

• Interface
• Three-pin (Gate, Collector, Emitter)

• Operating Temperature
• -55C to +150C Celsius (oC)

• Output
• Collector-Emitter (Switched Load)

• Power Source
• As per application (DC or Switched)

• Power Supply
• N/A (depends on application circuit)

• Product Type
• IGBT Transistor

• Rated Voltage
• 600V Volt (V)

• Response Time
• Switching Times: Turn-on < 200 ns, Turn-off < 400 ns Hours

• Size
• TO-220 Package

• Supply Voltage
• 600V Maximum Collector-Emitter Volt (v)

• Thermal Conductivity
• RthJC = 0.5C/W (Junction to Case) Watt/Meter/K (w/(m.k)

• Thickness
• Standard TO-220 (Typically ~4.5 mm) Millimeter (mm)

• Usage
• IGBT, power electronic switches, high power circuits

• Weight
• Approx. 3 g Grams (g)

• Color
• Black

• Control System
• Gate Controlled

• Interface Type
• Gate / Collector / Emitter

• Material
• Silicon Semiconductor

• Phase
• Single Phase

• Power Capacity
• 130W*

• Protection
• Short Circuit

• Size
• TO-3P(N) Package

• Weight
• 50 Grams (g)