Industrial Power Semiconductor IGBT

About Industrial Power Semiconductor IGBT

The GT20J101 is a silicon N-channel IGBT from Toshiba, designed for high-power switching applications. It combines high-voltage switching capability with a compact through-hole package, making it suitable for use in various power electronic circuits.

With a 600V collector-emitter voltage rating and 20A continuous collector current rating, the GT20J101 is suitable for compatible high-power switching applications such as power supplies, inverters and industrial electronic equipment.

The device features an enhancement-mode design and is specified for high-speed switching. The TO-3P(N) package with three terminals provides convenient through-hole mounting for compatible circuit boards and power electronics assemblies.

Key Features

• Toshiba GT20J101 IGBT
• Silicon N-channel IGBT
• 600V collector-emitter voltage
• 20A continuous collector current
• 40A pulsed collector current
• 20V gate-emitter voltage
• 130W collector power dissipation
• High-speed switching design
• 3-pin TO-3P(N) package
• Through-hole mounting
• Suitable for high-power switching applications

Applications

Suitable for compatible SMPS, inverters, power supplies, industrial control equipment, motor-control circuits, switching circuits and other high-power electronic applications.

Important: Always check the original circuit design, voltage/current requirements, gate-drive conditions, thermal requirements and package pin configuration before replacing an IGBT. Use the manufacturer's datasheet for final component selection.

GT20J101, GT20J101 IGBT, 20J101 IGBT, Power IGBT, Industrial IGBT, Power Switching IGBT, High Power IGBT, IGBT Semiconductor, Switching Semiconductor, Power Electronic Component, Industrial Power Semiconductor, Electronic IGBT, IGBT Transistor, Power Switching Device