Toshiba GT20J101 N-Channel IGBT Transistor 600V 20A High Power Switching TO-3P Package

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Toshiba GT20J101 N-Channel IGBT Transistor 600V 20A High Power Switching TO-3P Package

Name: Toshiba GT20J101 N-Channel IGBT Transistor 600V 20A High Power Switching TO-3P Package
Brand: RADHIKA ELECTRONICS
Price: 85.0 INR
Availability: InStock

Price 85.0 INR/ Piece

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MOQ : 5 Pieces

Toshiba GT20J101 N-Channel IGBT Transistor 600V 20A High Power Switching TO-3P Package Specification

Operating Temperature
-40C to +150C Celsius (oC)

Usage
Power Inverters, Induction Heating, Motor Drives, Switching Power Supplies

Response Time
Fast Switching (~0.25 s Turn-Off) Hours

Components
IGBT Chip, Encapsulation, Metal Leads

IP Rating
Not Rated (Semiconductor Component)

Power Supply
Standard DC Voltage Supply

Features
High Speed Switching, Low Saturation Voltage, TO-3P Package for Easy Mounting

Output
Collector-Emitter Current (20A)

Interface
3-Pin (Gate, Collector, Emitter)

Sensors Specification
No Sensors

Thermal Conductivity
High, with metal tab for efficient heat dissipation Calorie (IT)/second/centimeter/°C

Power Source
External Power Supply Required

Input
Gate Drive Signal (Typical V_GE: 20V Max)

Product Type
N-Channel IGBT Transistor

Application
High Power Switching, Industrial Control, UPS Systems

Rated Voltage
600V Volt (V)

Supply Voltage
600V (Collector-Emitter) Max Volt (v)

Size
TO-3P Package

Dimension (L*W*H)
Approx. 15.6 mm 20.0 mm 4.5 mm (Typical TO-3P Dimensions) Millimeter (mm)

Function
High Power N-Channel IGBT for Fast Switching Applications

Color
Black/Silver (Package/Leads)

Weight
Approx. 6g per unit Grams (g)

Thickness
Standard TO-3P package thickness Inch

Capacity
20A Continuous Collector Current Pcs/hr

Current Rating
20A Collector Current

Frequency
Up to 20kHz (Switching Frequency) Kilohertz ( KHZ )

Collector Current (Ic)
20A Continuous, 40A Pulsed

Turn-On Time (Ton)
~0.20 s (Typical)

Turn-Off Time (Toff)
~0.25 s (Typical)

Collector-Emitter Voltage (Vce)
600V Max

Model Number
GT20J101

Package Type
TO-3P

Polarity
N-Channel

Collector-Emitter Saturation Voltage (Vce(sat))
2.3V (Typical) at Ic=20A

Lead Pitch
2.54 mm (Standard)

Gate-Emitter Voltage (Vge)
20V Max

RoHS Compliant
Yes

Mounting Style
Through-Hole

Toshiba GT20J101 N-Channel IGBT Transistor 600V 20A High Power Switching TO-3P Package Trade Information

Minimum Order Quantity
5 Pieces

Payment Terms
Cash in Advance (CID)

Supply Ability
100 Pieces Per Month

Delivery Time
2 Days

Main Domestic Market
All India

About Toshiba GT20J101 N-Channel IGBT Transistor 600V 20A High Power Switching TO-3P Package

Unveil supreme value and latest switching capability with the Toshiba GT20J101 N-Channel IGBT Transistor. Highlighted for its ravishing efficiency and robust laureate construction, this power device excels in fast switching applications up to 20A and 600V. Housed in a TO-3P package with high thermal conductivity and low saturation voltage, it is RoHS compliant, making it suitable for environmentally-conscious projects. Ideal for power inverters, UPS systems, induction heating, and motor drives, the GT20J101 is a vital component for industrial and high-efficiency switching needs.

Optimal Applications and Usage

The Toshiba GT20J101 IGBT Transistor is specifically designed for high power switching tasks. Its supreme capability lends itself ideally to applications such as UPS systems, power inverters, switching power supplies, and industrial motor drives. This component provides unparalleled reliability and high-frequency response, making it suitable for both demanding industrial environments and precision control systems. Furthermore, its through-hole TO-3P package ensures compatibility with standard mounting requirements in professional-grade assemblies.

Order Processing and Supply Information

With robust order processing channels, the Toshiba GT20J101 N-Channel IGBT is readily available to manufacturers, suppliers, and wholesalers across India. Secure shipping and careful freight handling ensure that this product arrives intact and ready for use. Customers can expect competitive pricing at the FOB port, with rapid delivery times based on order volume. Every shipment is handled to meet stringent quality and safety standards for your peace of mind.

FAQ's of Toshiba GT20J101 N-Channel IGBT Transistor 600V 20A High Power Switching TO-3P Package:

Q: How is the Toshiba GT20J101 IGBT transistor typically used in industrial applications?

A: The Toshiba GT20J101 is primarily used in high power industrial systems such as UPS units, power inverters, induction heating equipment, and motor drives, where fast and efficient switching is required.

Q: What are the highlighted benefits of using this IGBT transistor in fast-switching applications?

A: Key benefits include high current handling (20A continuous), low saturation voltage for reduced energy losses, rapid switching response, and superior thermal conductivity for reliable and efficient operation.

Q: When should I consider choosing this transistor for my equipment?

A: Select the GT20J101 when your application demands robust, high-voltage, and high-current switching with reliable thermal management, especially in systems requiring up to 600V and 20A load capabilities.

Q: Where can this Toshiba N-Channel IGBT be supplied from?

A: This IGBT transistor can be directly sourced from reputable manufacturers, suppliers, and wholesalers in India, with secure shipping and freight services available for national and international delivery.

Q: What is the typical order processing and delivery timeline for the GT20J101?

A: Order processing is efficient and prompt; delivery time depends on order quantity and shipping destination, but customers can expect reliable turnaround with secure packaging for safe transit.

Q: How does the mounting style enhance its usability?

A: The through-hole TO-3P package with standardized lead pitch allows for easy and secure mounting on circuit boards, facilitating straightforward integration into various systems.

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